10PCS MOSFET Transistor IRFZ44N
The introduction of the MOSFET device changed the field of switching in electronics. MOSFET (Metal Oxide Semiconductor Field Effect Transistor) transistors are semiconductor devices used in electronic devices for switching and signal amplification. This MOSFET Transistor is an N-Channel MOSFET, which means it contains an N-channel region between the source and drain terminals. It is a four-terminal transistor with gate, drain, source, and body connections. The drain and source of this sort of Field Effect Transistor are strongly doped n+ regions, while the substrate or body is P-type.
Moreover, Because of its efficiency and speed, the n-channel type beats the p-channel type in MOSFET devices. As a result, this N-channel MOSFET transistor is chosen for high current applications.
Key Product Features:
- Best-in-class resistance with gate charge allows for increased frequency and power density.
- Our N-channel MOSFETs increase voltage and current control for a variety of power supply design requirements, including high switching frequency.
- Our N-channel MOSFETs also allow for lower form factors, allowing you to maximize power density while reducing your PCB footprint by more than 50%.
Specifications:
| FET Type |
MOSFET N-Channel, Metal Oxide |
| FET Feature |
Standard |
| Drain to Source Voltage (Vdss) |
55V |
| Current – Continuous Drain (Id) @ 25°C |
49A (Tc) |
| Rds On (Max) @ Id, Vgs |
17.5 mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250µA |
| Gate Charge (Qg) @ Vgs |
63nC @ 10V |
| Input Capacitance (Ciss) @ Vds |
1470pF @ 25V |
| Power – Max |
94W |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220 |
| Brand Name | Eiechip |
|---|---|
| Origin | Mainland China |
| Condition | New |
| Type | Field-Effect Transistor |
| is_customized | Yes |
| Package Type | Throught Hole |
| Model Number | IRFZ44N |
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